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2STW200 데이터시트(PDF) 3 Page - STMicroelectronics |
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2STW200 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 2STW100, 2STW200 Electrical characteristics Doc ID 17235 Rev 1 3/7 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCE = 80 V 0.5 mA ICEV Collector cut-off current (VBE = - 0.3 V) VCE = 80 V 0.1 mA ICEO Collector cut-off current (IB = 0) VCE = 60 V 0.5 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 2 mA VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %. For PNP type voltage and current values are negative. Collector-emitter sustaining voltage (IB = 0) IC = 50 mA 80 V VCE(sat) (1) Collector-emitter saturation voltage IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA 1.2 1.75 3.5 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 20 A IB = 80 mA 3.3 V VBE (1) Base-emitter voltage IC = 10 A VCE = 3 V 1 3 V hFE (1) DC current gain IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V 600 500 300 15000 12000 6000 VF (1) Diode forward voltage IF = 10 A TBD V Is/b Second breakdown current VCE = 25 V t = 500 ms TBD A |
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