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BUL416T 데이터시트(PDF) 2 Page - STMicroelectronics |
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BUL416T 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Electrical ratings BUL416T 2/9 Doc ID 16097 Rev 2 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1600 V VCEO Collector-emitter voltage (IB = 0) 800 V VEBO Emitter-base voltage (IC = 0) 9 V IC Collector current 6 A ICM Collector peak current (tP < 5 ms) 9 A IB Base current 5 A IBM Base peak current (tP < 5 ms) 8 A PTOT Total dissipation at Tc ≤ 25 °C 110 W TSTG Storage temperature - 65 to 150 °C TJ Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case max 1.14 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W |
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