2SC5084 datasheet(1/7 Pages) TOSHIBA

부품명	2SC5084

상세설명	VHF~UHF Band Low Noise Amplifier Applications

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SC5084

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5084

VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure, high gain.

• NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

12

V

Emitter-base voltage

VEBO

3

V

Base current

IB

40

mA

Collector current

IC

80

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Microwave Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Transition frequency

fT

VCE = 10 V, IC = 20 mA

5

7

⎯

GHz

⎪S21e⎪

2 (1)

VCE = 10 V, IC = 20 mA, f = 500 MHz

⎯

16.5

⎯

Insertion gain

⎪S21e⎪

2 (2)

VCE = 10 V, IC = 20 mA, f = 1 GHz

7.5

11

⎯

dB

NF (1)

VCE = 10 V, IC = 5 mA, f = 500 MHz

⎯

1

⎯

Noise figure

NF (2)

VCE = 10 V, IC = 5 mA, f = 1 GHz

⎯

1.1

2

dB

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 10 V, IE = 0

⎯

1

μA

Emitter cut-off current

IEBO

VEB = 1 V, IC = 0

⎯

1

μA

DC current gain

hFE

(Note 1)

VCE = 10 V, IC = 20 mA

80

⎯

240

Output capacitance

Cob

⎯

1.0

⎯

pF

Reverse transfer capacitance

Cre

VCB = 10 V, IE = 0, f = 1 MHz (Note 2)

⎯

0.65

1.15

pF

Note 1: hFE classification O: 80~160, Y: 120~240

Note 2: Cre is measured by 3 terminal method with capacitance bridge.

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

유사한 부품 번호 - 2SC5084

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC5084	349Kb / 5P	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
Toshiba Semiconductor	2SC5084	992Kb / 7P	Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
Inchange Semiconductor ...	2SC5084	267Kb / 5P	High Gain Bandwidth Product
Toshiba Semiconductor	2SC5084	1Mb / 73P	Bipolar Small-Signal Transistors
Toshiba Semiconductor	2SC5084	992Kb / 7P	Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

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2SC5084 데이터시트(PDF) 1 Page - Toshiba Semiconductor

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