28F256 datasheet(1/35 Pages) AMD

부품명	28F256

상세설명	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

PDF	35 Pages

Scroll/Zoom	100%

제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

Logo

1 / 35 page

FINAL

Publication# 11560

Rev: G Amendment/+2

Issue Date: January 1998

Am28F256

256 Kilobit (32 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

s High performance

— 70 ns maximum access time

s CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

s Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

s 10,000 write/erase cycles minimum

s Write and erase voltage 12.0 V

±5%

s Latch-up protected to 100 mA

from –1 V to VCC +1 V

s Flasherase Electrical Bulk Chip-Erase

— One second typical chip-erase

s Flashrite Programming

— 10 µs typical byte-program

— 0.5 second typical chip program

s Command register architecture for

microprocessor/microcontroller compatible

write interface

s On-chip address and data latches

s Advanced CMOS flash memory technology

— Low cost single transistor memory cell

s Automatic write/erase pulse stop timer

GENERAL DESCRIPTION

The Am28F256 is a 256 K Flash memory organized as

32 Kbytes of 8 bits each. AMD’s Flash memories offer

the most cost-effective and reliable read/write non-

volatile random access memory. The Am28F256 is

packaged in 32-pin PDIP, PLCC, and TSOP versions. It

is designed to be reprogrammed and erased in-system

or in standard EPROM programmers. The Am28F256

is erased when shipped from the factory.

The standard Am28F256 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F256 has separate chip enable (CE#) and

output enable (OE#) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F256 uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash Standard 32-pin pinout. The command register

allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming.

AMD’s Flash technology reliably stores memor y

contents even after 10,000 erase and program cycles.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The Am28F256

uses a 12.0V

±5% V

PP high voltage input to perform

the Flasherase and Flashrite algorithms.

The highest degree of latch-up protection is achieved

with AMD’s proprietar y non-epi process. Latch-up

protection is provided for stresses up to 100 milliamps

on address and data pins from –1 V to VCC +1 V.

The Am28F256 is byte programmable using 10 µs

programming pulses in accordance with AMD ’s

Flashrite programming algorithm. The typical room

temperature programming time of the Am28F256 is a

half a second. The entire chip is bulk erased using

10 ms erase pulses according to AMD’s Flasherase

alrogithm. Typical erasure at room temperature is

accomplished in less than one second. The windowed

package and the 15-20 minutes required for EPROM

erasure using ultra-violet light are eliminated.

유사한 부품 번호 - 28F256

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	28F256	715Kb / 20P	256K(32K x8, Chip Erase)FLASH MEMORY Mar-1996
STMicroelectronics	28F256	523Kb / 20P	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory Aug-1998
Advanced Micro Devices	28F256	456Kb / 35P	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
Intel Corporation	28F256L18	1Mb / 106P	StrataFlash Wireless Memory
Numonyx B.V	28F256L18	1Mb / 106P	StrataFlash Wireless Memory

More results

유사한 설명 - 28F256

제조업체	부품명	데이터시트	상세설명
Mosel Vitelic, Corp	V29LC51000	52Kb / 12P	512 KILOBIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
Advanced Micro Devices	AM27C256	171Kb / 12P	256 Kilobit (32 K x 8-Bit) CMOS EPRO
	AM27X256	139Kb / 10P	256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device
	AM28F010	492Kb / 35P	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
	AM28F010A	464Kb / 35P	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
	AM28F020	509Kb / 35P	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
	AM28F020A	470Kb / 35P	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
	AM28F256A	456Kb / 35P	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
	AM28F512	484Kb / 35P	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
	AM28F512A	463Kb / 34P	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

More results

28F256 데이터시트(PDF) 1 Page - Advanced Micro Devices

28F256 데이터시트(HTML) 1 Page - Advanced Micro Devices

유사한 부품 번호 - 28F256

유사한 설명 - 28F256

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

데이터시트 다운로드

링크 URL