28F256 datasheet(1/35 Pages) AMD

부품명	28F256

상세설명	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

PDF	35 Pages

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제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

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FINAL

Publication# 18879

Rev: C Amendment/+2

Issue Date: May 1998

Am28F256A

256 Kilobit (32 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

DISTINCTIVE CHARACTERISTICS

s High performance

— Access times as fast as 70 ns

s CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

s Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

s 100,000 write/erase cycles minimum

s Write and erase voltage 12.0 V

±5%

s Latch-up protected to 100 mA from –1 V to

VCC +1 V

s Embedded Erase Electrical Bulk Chip-Erase

— 1.5 seconds typical chip-erase including

pre-programming

s Embedded Program

— 14 µs typical byte-program including time-out

— 0.5 second typical chip program

s Command register architecture for

microprocessor/microcontroller compatible

write interface

s On-chip address and data latches

s Advanced CMOS flash memory technology

— Low cost single transistor memory cell

s Embedded algorithms for completely

self-timed write/erase operations

GENERAL DESCRIPTION

The Am28F256A is a 256 K Flash memory organized

as 32 Kbytes of 8 bits each. AMD’s Flash memories

offer the most cost-effective and reliable read/write

non- volatile random access memory. The Am28F256A

is packaged in 32-pin PDIP, PLCC, and TSOP versions.

It is designed to be reprogrammed and erased in-sys-

tem or in sta ndard EPROM programmers. Th e

Am28F256A is erased when shipped from the factory.

The standard Am28F256A offers access times as fast

as 70 ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the Am28F256A has separate chip enable (CE#)

and output enable (OE#) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F256A uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash Standard 32-pin pinout. The command register

allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming.

AMD’s Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low inter-

nal elec tr ic fields fo r erase a nd programmi ng

operations produces reliable cycling. The Am28F256A

uses a 12.0 V

±5% V

PP high voltage input to perform

the erase and programming functions.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 milliamps on

address and data pins from –1 V to VCC +1 V.

Embedded Program

The Am28F256A is byte programmable using the

Embedded Programming algorithm. The Embedded

Programming algorithm does not require the system to

time-out or verify the data programmed. The typical

r o o m te m p e r a t ur e pr ogr a m m i ng tim e o f th e

Am28F256A is one half second.

Embedded Erase

The entire chip is bulk erased using the Embedded

Erase algorithm. The Embedded Erase algorithm

automatically programs the entire array prior to electrical

erase. The timing and verification of electrical erase are

유사한 부품 번호 - 28F256

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	28F256	715Kb / 20P	256K(32K x8, Chip Erase)FLASH MEMORY Mar-1996
STMicroelectronics	28F256	523Kb / 20P	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory Aug-1998
Advanced Micro Devices	28F256	493Kb / 35P	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
Intel Corporation	28F256L18	1Mb / 106P	StrataFlash Wireless Memory
Numonyx B.V	28F256L18	1Mb / 106P	StrataFlash Wireless Memory

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