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AS5030 데이터시트(PDF) 7 Page - ams AG |
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AS5030 데이터시트(HTML) 7 Page - ams AG |
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7 / 44 page ![]() www.ams.com/AS5030 Revision 2.4 7 - 44 AS5030 Datasheet - Electrical Character i s t ics 6.3 Magnet Specifications Recommended magnet: NdFeB 35H BR = 12.000 Gauss, Ø6mm x 2.5mm 6.4 Magnetic Field Alarm Limits 6.5 Hall Element Sensitivity Options Symbol Parameter Conditions Min Typ Max Units MD Magnet diameter Diametrically magnetized 6 mm MT Magnet thickness 2.5 mm Bi Magnetic input range At chip surface, on a radius of 1mm 20 80 mT vi Magnet rotation speed To maintain locked state 30.000 rpm Bmax Magnetic field high detection TAMB=25°C, AGC @ lower limit, 1 sigma = 2.5mT 52 mT Bmin Magnetic field low detection TAMB=25°C, AGC @ upper limit, 1 sigma = 1.5mT 23 Hall array radius Over x/y chip center 1 mm Vertical distance of magnet Recommended distance; operation outside this range is possible, accuracy may be reduced 0.5 1 1.8 mm Horizontal magnet displacement radius From diagonal package center 0.25 mm From diagonal IC center 0.5 tkM Recommended magnet material and temperature drift NdFeB Material -0.12 %/K SmCo Material -0.035 Symbol Parameter Conditions Min Typ Max Units AGCFF Magnetic field too low alarm limit AGC = FFH untrimmed, 25°C, 1sigma 20.3 23.6 mT AGC0 Magnetic field too high alarm limit AGC = 0H untrimmed, 25°C, 1sigma 44.5 52.2 mT Magnetic field alarm limit trim range (see Hall Element Sensitivity Options on page 7) 100 121 % Temperature coefficient of alarm ranges Sensitivity increases with temperature which partly compensates the temperature coefficient of the magnet 0.052 %/K Symbol Parameter Conditions Min Typ Max Units sens Hall element sensitivity setting sens = 00 (default); low sensitivity (see 18-bit OTP Write Commands on page 25) 100 % sens = 01 106 sens = 10 113 sens = 11 (high sensitivity) 121 |
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