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AS5215

Datasheet - Electrical Character i s t ics

6 Electrical Characteristics

Unless otherwise noted all in this specification defined tolerances of parameters are assured over the whole operation conditions range and also

over lifetime.

Table 3. Operating Conditions

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Positive Supply Voltage

4.5

5.5

V

Negative Supply Voltage

0.0

0.0

V

T_amb

Ambient temperature

-40

150

ºC

Table 4. DC/AC Characteristics for Digital Inputs and Outputs

Symbol

Parameter

Condition

Min

Typ

Max

Unit

CMOS Input

V_IH

High level Input voltage

V

V_IL

Low level Input Voltage

V

I_LEAK

Input Leakage Current

1

µA

CMOS Output

V_OH

High level Output voltage

4 mA

V

V_OL

Low level Output Voltage

4 mA

V

C_L

Capacitive Load

35

pF

t_slew

Slew Rate

30

ns

t_delay

Time Rise Fall

15

ns

CMOS Output Tristate

I_OZ

Tristate Leakage Current

1

µA

Table 5. Magnetic Input Specification

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Two pole cylindrical magnet, diametrically magnetized:

Diameter

4

6

mm

Magnetic input field amplitude

200 – 800 Gauss

20

50

80

mt

Rotational speed

Max 30000 RPM

0

500

Hz

Table 6. Electrical System Specifications

Symbol

Parameter

Condition

Min

Typ

Max

Unit

IDD

Current Consumption

Max value derived at maximum I_H (Hall Bias

Current)

Note:

For single die only.

20

28

mA

Power up time

1.275

ms

Propagation delay

-40 to 150ºC

18

22

30

µs

M

Magnetic Sensitivity

1G = 0.1 mT

1

6

mV/G

Analog output range

Vss+

0.25

Vdd-

0.5

V

AP2_1)

Amplitude ratio tracking accuracy

over temperature

-40 to 150ºC

-1

+1

%