AT45D161-JC datasheet(18/20 Pages) ATMEL

18 / 20 page

AT45D161

Figure 2. Algorithm for Randomly Modifying Data

Notes:

To preserve data integrity, each page of a DataFlash

sector (256 pages per sector) must be

updated/rewritten at least once within every 10,000

cumulative page erase/program operations within

that sector.

A Page Address Pointer must be maintained to indi-

cate which page is to be rewritten. The Auto Page

Rewrite command must use the address specified

by the Page Address Pointer.

Other algorithms can be used to rewrite portions of

the Flash array. Low power applications may choose

to wait until 10,000 cumulative page erase/program

operations have accumulated before rewriting all

256 pages of the sector. See application note AN-4

(“Using Atmel’s Serial DataFlash”) for more details.

START

MAIN MEMORY PAGE

to BUFFER TRANSFER

(53H, 55H)

INCREMENT PAGE

ADDRESS POINTER

(2)

Auto Page Rewrite

(2)

(58H, 59H)

END

provide address of

page to modify

If planning to modify multiple

bytes currently stored within

a page of the Flash array

MAIN MEMORY PAGE PROGRAM

(82H, 85H)

BUFFER WRITE

(84H, 87H)

BUFFER to MAIN

MEMORY PAGE PROGRAM

(83H, 86H)

Sector Addressing

PA11

PA10

PA9

PA8

Sector

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