AT45DB011 datasheet(17/19 Pages) ATMEL

17 / 19 page

AT45DB011

Figure 2. Algorithm for Randomly Modifying Data

Notes:

To preserve data integrity, each page of a DataFlash

sector must be updated/rewritten at least once

within every 10,000 cumulative page erase/program

operations within that sector.

A Page Address Pointer must be maintained to indi-

cate which page is to be rewritten. The Auto Page

Rewrite command must use the address specified

by the Page Address Pointer.

Other algorithms can be used to rewrite portions of

the Flash array. Low power applications may choose

to wait until 10,000 cumulative page erase/program

operations have accumulated before rewriting all

pages of the sector. See application note AN-4

(“Using Atmel’s Serial DataFlash”) for more details.

START

MAIN MEMORY PAGE

to BUFFER TRANSFER

(53H)

INCREMENT PAGE

ADDRESS POINTER

(2)

Auto Page Rewrite

(2)

(58H)

END

provide address of

page to modify

If planning to modify multiple

bytes currently stored within

a page of the Flash array

MAIN MEMORY PAGE PROGRAM

(82H)

BUFFER WRITE

(84H)

BUFFER to MAIN

MEMORY PAGE PROGRAM

(83H)

Sector Addressing

PA8

PA7

PA6

PA5

PA4

PA3

PA2-

PA0

Sector

XXX

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