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PS219B2-AS 데이터시트(PDF) 4 Page - Powerex Power Semiconductors |
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PS219B2-AS 데이터시트(HTML) 4 Page - Powerex Power Semiconductors |
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4 / 11 page ![]() PS219B2-S, PS219B2-AS, PS219B2-CS Intellimod™ Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts 4 12/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697-1800 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified PS219B2-S, PS219B2-AS, Characteristics Symbol PS219B2-CS Units Inverter Part Supply Voltage (Applied between P-NU, NV, NW) VCC 450 Volts Supply Voltage, Surge (Applied between P-NU, NV, NW) VCC(surge) 500 Volts Collector-Emitter Voltage VCES 600 Volts Each IGBT Collector Current (TC = 25°C) ±IC 5 Amperes Each Peak Collector Current (TC = 25°C, Less than 1ms) ±ICP 10 Amperes Collector Dissipation (TC = 25°C, per 1 Chip) PC 21.3 Watts Power Device Junction Temperature*1 Tj -20 ~ +150 °C Control (Protection) Part Control Supply Voltage (Applied between VP1-VNC, VN1-VNC) VD 20 Volts Control Supply Voltage (Applied between VUFB-U, VVFB-V, VWFB-W) VDB 20 Volts Input Voltage (Applied between UP, VP, WP-VNC, UN, VN, WN-VNC) VIN -0.5 ~ VD+0.5 Volts Fault Output Supply Voltage (Applied between FO-VNC) VFO -0.5 ~ VD+0.5 Volts Fault Output Current (Sink Current at FO Terminal) IFO 1 mA Current Sensing Input Voltage (Applied between CIN-VNC) VSC -0.5 ~ VD+0.5 Volts Total System Self-protection Supply Voltage Limit, Short Circuit Protection Capability VCC(prot.) 400 Volts (VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C, Non-repetitive less than 2µs) Module Case Operating Temperature*2 TC -20 ~ +100 °C Storage Temperature Tstg -40 ~ +125 °C Isolation Voltage, 60Hz, Sinusoidal 1 Minute, All Connected Pins to Heatsink Plate VISO 1500 Vrms Thermal Resistance Junction to Case*3 Rth(j-c)Q Inverter IGBT Part (Per 1/6 Module) — — 4.7 °C/Watt Rth(j-c)D Inverter FWDi Part (Per 1/6 Module) — — 5.4 °C/Watt *1 The maximum junction temperature rating of the power chips integrated within the DIPIPM is 150°C (@TC ≤ 100°C). However, to ensure safe operation of the DIPIPM, the average junction temperature should be limited to Tj(avg) ≤125°C (@TC ≤ 100°C). *2 TC measurement point *3 Good thermal grease with long-term quality should be applied evenly with +100µm ~ +200µm on the contacting surface of the DIPIPM and heatsink. The contacting thermal resistance between DIPIPM case and heatsink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/mK. FWDi CHIP POSITION POWER TERMINALS CONTROL TERMINALS IGBT CHIP POSITION HEATSINK SIDE TC POINT 11.6mm 3.0mm DIPIPM |
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