CSD19503KCS datasheet(2/10 Pages) TI1

2 / 10 page

CSD19503KCS

SLPS479 – DECEMBER 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 64 V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250 μA

2.2

2.8

3.4

VGS = 6 V, ID = 60 A

8.8

10.9

Ω

RDS(on)

Drain-to-Source On Resistance

VGS = 10 V, ID = 60 A

7.6

9.2

Ω

gfs

Transconductance

VDS = 8 V, ID = 60 A

110

Dynamic Characteristics

Ciss

Input Capacitance

2100

2730

Coss

Output Capacitance

VGS = 0 V, VDS = 40 V, f = 1 MHz

555

721

Crss

Reverse Transfer Capacitance

8.5

11.1

Series Gate Resistance

1.2

2.4

Ω

Gate Charge Total (10 V)

Qgd

Gate Charge Gate to Drain

5.4

VDS = 40 V, ID = 60 A

Qgs

Gate Charge Gate to Source

9.8

Qg(th)

Gate Charge at Vth

6.1

Qoss

Output Charge

VDS = 40 V, VGS = 0 V

td(on)

Turn On Delay Time

Rise Time

VDS = 40 V, VGS = 10 V,

IDS = 60 A, RG = 0 Ω

td(off)

Turn Off Delay Time

Fall Time

Diode Characteristics

VSD

Diode Forward Voltage

ISD = 60 A, VGS = 0 V

0.9

1.1

Qrr

Reverse Recovery Charge

119

VDS= 40 V, IF = 60 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Thermal Resistance Junction to Case

0.8

°C/W

RθJA

Thermal Resistance Junction to Ambient

°C/W

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