◎ SEMIHOW REV.A1,March 2013

10

-2

10

-1

10

0

10

1

10

-1

10

0

10

1

Pulse Time [sec]

0

1

2

3

4

10

-1

10

0

10

1

10

2

25

Instantaneou on state voltage, V

150

-50

-25

0

25

50

75

100

125

150

0

1

2

Junction Temperature, T

Typical Characteristics

Fig 7. Holding current vs.

Junction temperature

Fig 8. Thermal Impedance vs. pulse time

Fig 9. Instantaneous on state current vs.

Instantaneous on state voltage

R

G

R

L

V

DD

V

G

(1) Quadrant I

R

G

R

L

V

DD

V

G

(2) Quadrant II

R

G

R

L

V

DD

V

G

(3) Quadrant III

R

G

R

L

V

DD

V

G

(4) Quadrant IV

Measurement of gate trigger current

Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.

R

V