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DMN65D8L 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DMN65D8L
상세설명  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN65D8L 데이터시트(HTML) 2 Page - Diodes Incorporated

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DMN65D8L
Document number: DS35923 Rev. 2 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMN65D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
310
240
mA
Continuous Drain Current (Note 6) VGS = 5V
Steady
State
TA = +25°C
TA = +70°C
ID
270
210
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
800
mA
Maximum Body Diode Continuous Current (Note 5)
IS
500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 6)
PD
370
mW
(Note 5)
540
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
348
°C/W
(Note 5)
241
Thermal Resistance, Junction to Case
(Note 5)
RθJC
91
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1.0
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
±5
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1.2
⎯
2.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS (ON)
⎯
2
3
Ω
VGS = 10V, ID = 0.115A
⎯
2.5
4
Ω
VGS = 5V, ID = 0.115A
Forward Transconductance
gFS
80
290
⎯
mS
VDS = 10V, ID = 0.115A
Diode Forward Voltage
VSD
⎯
0.8
1.2
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
⎯
22.0
⎯
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
⎯
3.2
⎯
Reverse Transfer Capacitance
Crss
⎯
2.0
⎯
Gate Resistance
RG
⎯
79.9
⎯
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge VGS = 10V
Qg
⎯
0.87
⎯
nC
VGS = 10V, VDS = 30V,
ID = 150mA
Total Gate Charge VGS = 4.5V
Qg
⎯
0.43
⎯
Gate-Source Charge
Qgs
⎯
0.11
⎯
Gate-Drain Charge
Qgd
⎯
0.11
⎯
Turn-On Delay Time
tD(on)
⎯
2.7
⎯
nS
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
Turn-On Rise Time
tr
⎯
2.8
⎯
Turn-Off Delay Time
tD(off)
⎯
12.6
⎯
Turn-Off Fall Time
tf
⎯
7.3
⎯
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
.



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