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3N170 데이터시트(PDF) 2 Page - Calogic, LLC

부품명 3N170
상세설명  N-Channel Enhancement Mode MOSFET Switch
PDF  2 Pages
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제조업체  CALOGIC [Calogic, LLC]
홈페이지  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

3N170 데이터시트(HTML) 2 Page - Calogic, LLC

  3N170 Datasheet HTML 1Page - Calogic, LLC 3N170 Datasheet HTML 2Page - Calogic, LLC  
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ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified) Substrate connected to source.
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
BVDSS
Drain-Source Breakdown Voltage
25
V
ID = 10
µA, VGS = 0
IGSS
Gate Leakage Current
±10
pA
VGS =
±35V, VDS = 0
100
VGS = 35V, VDS = 0, TA = 125
oC
IDSS
Zero-Gate-Voltage Drain Current
10
nA
VDS = 10V, VGS = 0
1.0
µA
TA = 125
oC
VGS(th)
Gate-Source Threshold Voltage
3N170
1.0
2.0
VVDS = 10V, ID = 10
µA
3N171
1.5
3.0
ID(on)
"ON" Drain Current
10
mA
VGS = 10V, VDS = 10V
VDS(on)
Drain-Source "ON" Voltage
2.0
V
ID = 10mA, VGS = 10V
rds(on)
Drain-Source ON Resistance
200
Ω
VGS = 10V, ID = 0, f = 1kHz
| Yfs |
Forward Transfer Admittance
1000
µS
VDS = 10V, ID = 2.0mA, f = 1kHz
Crss
Reverse Transfer Capacitance (Note 1)
1.3
pF
VDS = 0, VGS = 0, f = 1MHz
Ciss
Input Capacitance (Note 1)
5.0
VDS = 10V, VGS = 0, f = 1MHz
Cd(sub)
Drain-Substrate Capacitance (Note 1)
5.0
VD(SUB) = 10V, f = 1MHz
td(on)
Turn-On Delay Time (Note 1)
3.0
ns
VDD = 10V, ID(on) = 10mA,
VGS(on) = 10V, VGS(off) = 0,
RG = 50
Ω
tr
Rise Time (Note 1)
10
td(off)
Turn-Off Delay Time (Note 1)
3.0
tf
Fall Time (Note 1)
15
NOTE 1: For design reference only, not 100% tested.
3N170 / 3N171
CORPORATION



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