| 전자부품 데이터시트 검색엔진 |
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IRLML0030PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLML0030PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 10 page ![]() IRLML0030TRPbF 2 www.irf.com D S G Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 33 40 ––– 22 27 VGS(th) Gate Threshold Voltage 1.3 1.7 2.3 V IDSS ––– ––– 1 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.3 ––– Ω gfs Forward Transconductance 9.5 ––– ––– S Qg Total Gate Charge ––– 2.6 ––– Qgs Gate-to-Source Charge ––– 0.8 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 ––– td(on) Turn-On Delay Time ––– 5.2 ––– tr Rise Time ––– 4.4 ––– td(off) Turn-Off Delay Time ––– 7.4 ––– tf Fall Time ––– 4.4 ––– Ciss Input Capacitance ––– 382 ––– Coss Output Capacitance ––– 84 ––– Crss Reverse Transfer Capacitance ––– 39 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 11 17 ns Qrr Reverse Recovery Charge ––– 4.0 6.0 nC ––– ––– ––– ––– pF A 1.6 21 VDD =15Vd nA nC ns VDS = VGS, ID = 25μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C RDS(on) VGS = 10V, ID = 5.2A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m Ω Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 4.2A d MOSFET symbol showing the VDS =15V Conditions VGS = 4.5V VGS = 0V VDS = 15V ƒ = 1.0MHz RG = 6.8 Ω VGS = 4.5V d di/dt = 100A/μs d VGS = 20V VGS = -20V TJ = 25°C, IS = 1.6A, VGS = 0V d integral reverse p-n junction diode. VDS = 10V, ID = 5.2A ID = 5.2A ID = 1.0A TJ = 25°C, VR = 15V, IF=1.6A |
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