전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

CAT33C804APITE13 데이터시트(PDF) 13 Page - Catalyst Semiconductor

부품명 CAT33C804APITE13
상세설명  4K-Bit Secure Access Serial E2PROM
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  CATALYST [Catalyst Semiconductor]
홈페이지  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT33C804APITE13 데이터시트(HTML) 13 Page - Catalyst Semiconductor

Back Button CAT33C804APITE13 Datasheet HTML 6Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 7Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 8Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 9Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 10Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 11Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 12Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 13Page - Catalyst Semiconductor CAT33C804APITE13 Datasheet HTML 14Page - Catalyst Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 13 / 14 page
background image
Preliminary
CAT33C804A
13
Doc. No. 25044-00 2/98
1000 0011
Override the memory protection for the next instruction.
READ Read Memory
1100
[A7–A0]
(x16 organization)
1100 1001
1001
[A15–A8] [A7–A0]
(x8 organization)
Output the contents of the addressed memory location
to the serial port.
WRITE Write Memory
1100
[A7–A0] [D15–D8] [D7–D0]
(x16 organization)
1100 0001
0001
[A15–A8] [A7–A0] [D7–D0]
(x8 organization)
Write the 8-bit or 16-bit data to the addressed memory
location. After the instruction, address, and data have
been entered, the self-timed program/erase cycle will
start. The addressed memory location will be erased
before data is written. The DO pin may be used to output
the RDY/
BUSY status by having previously entered the
ENBSY instruction. During the program/erase cycle, DO
will output a LOW for BUSY during this cycle and a HIGH
for READY after the cycle has been completed.
ERASE Clear Memory
1100
[A7–A0]
(x16 organization)
1100 0000
0000
[A15–A8] [A7–A0]
(x8 organization)
Erase data in the specified memory location (set memory
to “1”). After the instruction and the address have been
entered, the self-timed clear cycle will start. The DO pin
may be used to output the RDY/
BUSY status by having
previously entered the ENSBY instruction. During the
clear cycle, DO will output a LOW for BUSY during this
cycle and a HIGH for ready after the cycle has been
completed.
ERAL Clear All
1000
1000 1001
1001
Erase the data of all memory locations (all cells set to
“1”). For protection against inadvertent chip clear, the
ERAL instruction is required to be entered twice.
Figure 16. WRAL Timing (x8 Format)
33C804 F17
33C804 F18
Note:
(1)
DO becomes low to indicate busy status if ENBSY was previously executed. If ENBSY was not previously executed, DO will be in the
High-Z condition.
CS
DI
HIGH-Z
DO
OP0–OP7
tEW
BUSY(1)
OP CODE
OP0–OP7
OP CODE
NEXT INSTRUCTION
D0–D7
DATA
Figure 17. WRAL Timing (x16 Format)
CS
DI
HIGH-Z
DO
OP0–OP7
tEW
BUSY(1)
OP CODE
OP0–OP7
OP CODE
NEXT INSTRUCTION
D8–D15
DATA
D0–D7
DATA



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com