| 전자부품 데이터시트 검색엔진 |
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VT6T2 데이터시트(PDF) 2 Page - Rohm |
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VT6T2 데이터시트(HTML) 2 Page - Rohm |
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2 / 8 page ![]() VT6T2 / EMT52 Datasheet l lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA ICP*1 -200 mA Power dissipation VT6T2 PD*2 *3 150 mW EMT52 150 Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50μA -50 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.1 μA Emitter cut-off current IEBO VEB = -5V - - -0.1 μA Collector-emitter saturation voltage VCE(sat) IC = -50mA, IB = -5mA - -0.15 -0.40 V DC current gain hFE VCE = -6V, IC = -1mA 120 - 560 - Transition frequency fT VCE = -10V, IE = 10mA, f = 100MHz - 300 - MHz Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 1.6 - pF *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/7 20130905 - Rev.002 |
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