| 전자부품 데이터시트 검색엔진 |
|
CMPT5551 데이터시트(PDF) 1 Page - Central Semiconductor Corp |
|
|
|||||||||||||||||||||||||||||
CMPT5551 데이터시트(HTML) 1 Page - Central Semiconductor Corp |
|
1 / 2 page ![]() Central Central Central Central Central Semiconductor Corp. Semiconductor Corp. Semiconductor Corp. Semiconductor Corp. Semiconductor Corp. TM 186 CMPT5551 NPN SILICON TRANSISTOR SOT-23 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. Marking Code is 1FF. MAXIMUM RATINGS (TA=25 oC) SYMBOL UNITS Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 oC Thermal Resistance ΘJA 357 oC/W ELECTRICAL CHARACTERISTICS (TA=25 oC unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100 oC 50 µ A BVCBO IC=100µA 180 V BVCEO IC=1.0mA 160 V BVEBO IE=10µA 6.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.15 V VCE(SAT) IC=50mA, IB=5.0mA 0.20 V VBE(SAT) IC=10mA, IB=1.0mA 1.00 V VBE(SAT) IC=50mA, IB=5.0mA 1.00 V hFE VCE=5.0V, IC=1.0mA 80 hFE VCE=5.0V, IC=10mA 80 250 hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 6.0 pF |
유사한 부품 번호 - CMPT5551 |
|
유사한 설명 - CMPT5551 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |