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STL65DN3LLH5 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STL65DN3LLH5
상세설명  Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET
PDF  12 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL65DN3LLH5 데이터시트(HTML) 5 Page - STMicroelectronics

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STL65DN3LLH5
Electrical characteristics
Doc ID 18323 Rev 1
5/12
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V, ID= 9.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
-
8.8
18
26
4
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
19
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
76
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 19 A, VGS=0
-1.1
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A,
di/dt = 100 A/µs,
VDD=25 V, Tj=150 °C
-
24
12
1.8
ns
nC
A



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