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C147C 데이터시트(PDF) 2 Page - Digitron Semiconductors

부품명 C147C
상세설명  HIGH POWER SILICON CONTROLLED RECTIFIER
PDF  5 Pages
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제조업체  DIGITRON [Digitron Semiconductors]
홈페이지  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

C147C 데이터시트(HTML) 2 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
C147A-C147PB
HIGH POWER SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Units
Test Condition
Peak off-state and reverse current
TJ = -40 to 125°C
VDRM = VRRM =
C147A
C147B
C147C
C147D
C147E
C147M
C147S
C147N
C147T
C147P
C147PA
C147PB
IDRM,
IRRM
-
-
-
-
-
-
-
-
-
-
-
-
12
12
12
10
10
10
10
9
8
7
6.5
6
mA
100 Volts peak
200 Volts peak
300 Volts peak
400 Volts peak
500 Volts peak
600 Volts peak
700 Volts peak
800 Volts peak
900 Volts peak
1000 Volts peak
1100 Volts peak
1200 Volts peak
-
150
TC = 25°C, VD = 12Vdc, RL = 12ohms
DC gate trigger current
IGT
-
300
mAdc
TC = -40°C, VD = 12Vdc, RL = 12ohms
-
3
TC = 25°C, VD = 12Vdc, RL = 12ohms
-
3.5
TC = -40°C, VD = 12Vdc, Rl = 12ohms
DC gate trigger voltage
VGT
0.25
-
Vdc
TC = 125°C, rated VDRM, RL = 1000ohms
Peak on-state voltage
VTM
-
3
V
TC = 25°C, ITM = 500A(pk), 1ms wide pulse,
duty cycle ≤ 1%
Holding current
IH
-
250
mAdc
TC = 25°C anode supply = 24Vdc, gate
supply = 10V/20ohms.
Initial forward pulse = 2A, 0.1 ms to 10 ms
wide
Critical rate of rise of off-state voltage
(higher values may cause device switching)
dv/dt
200
-
V/µs
TC = 125°C, rated VDRM, using linear
exponential rising waveform, gate open
circuited
Exponential dv/dt = VDRM / т) (0.632)
Thermal resistance
R
ӨJC
-
0.35
°C/W
Junction to case
Typical turn-off time
tq
125
µsec
1) TJ = 125°C
2) ITM = 150A, peak
3) VR = 50V, min
4) VDRM (reapplied)
5) Rate-of-rise of reapplied off state
voltage = 20V/µsec (linear)
6) Commutation di/dt = 5A/µsec
7) Repetition rate = 1PPS
8) Gate bias during turn-off
interval = 0V, 100Ω
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116



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