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2N70Z 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2N70Z 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 2N70Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-766.B ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 2.0 A Drain Current Continuous ID 2.0 A Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 140 mJ Repetitive (Note 2) EAR 2.8 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=45mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °С/W Junction to Case θJc 4.24 °С/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 700 V Drain-Source Leakage Current IDSS VDS = 700V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0V 5 μA Reverse VGS = -20V, VDS = 0V -5 μA Breakdown Voltage Temperature Coefficient △ BVDSS/T △ J ID = 250 μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 5.0 6.3 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, f =1MHz 270 350 pF Output Capacitance COSS 38 50 pF Reverse Transfer Capacitance CRSS 5 7 pF |
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