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2SD2686L-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SD2686L-AB3-R
상세설명  SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD2686L-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SD2686L-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SD2686L-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SD2686L-AB3-R Datasheet HTML 3Page - Unisonic Technologies  
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2SD2686
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R208-050.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
60±10
V
Emitter-Base Voltage
VEBO
8
V
Collector Current
DC
IC
1
A
Pulse
ICP
3
A
Base Current
IB
0.5
A
Power Dissipation (Note 2)
PD
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on an FR4 board (glass-epoxy; 1.6mm thick; Cu area, 645mm
2)
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
50
60
70
V
Collector Cut-Off Current
ICBO
VCB=45V, IE=0
10
μA
ICEO
VCE=45V, IE=0
10
μA
Emitter Cut-Off Current
IEBO
VEB=8V, IC=0
0.8
4.0
mA
DC Current Gain
hFE
VCE=2V, IC=1.0A
2000
Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A, IB=1mA
1.2
V
IC=1.0A, IB=1mA
1.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=1.0A, IB=1mA
2.0
V
Turn-On Time
tON
See specified test circuit.
0.4
μs
Storage Time
tSTG
4.0
μs
Fall Time
tF
0.6
μs



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