9014C datasheet(1/2 Pages) UTC

부품명	9014C

상세설명	NPN EPITAXIAL SILICON TRANSISTOR

PDF	2 Pages

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UTC 9014

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R201-031,A

PRE-AMPLIFIER, LOW LEVEL &

LOW NOISE

FEATURES

*High total power dissipation. (450mW)

*Excellent hFE linearity.

*Complementary to UTC 9015

TO-92

1

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

45

V

Emitter-base voltage

VEBO

5

V

Collector current

Ic

100

mA

Collector dissipation

Pc

450

mW

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BVCBO

Ic=100

µA, IE=0

50

V

Collector-emitter breakdown voltage

BVCEO

Ic=1mA, IB=0

45

V

Emitter-base breakdown voltage

BVEBO

IE=100

µA, Ic=0

5

V

Collector cutoff current

ICBO

VCB=50V, IE=0

50

nA

Emitter cutoff current

IEBO

VEB=5V, IC=0

100

nA

DC current gain

hFE

VCE=5V,Ic=1mA

60

280

1000

Collector-emitter saturation voltage

VCE(sat)

Ic=100mA, IB=5mA

0.14

0.3

V

Base-emitter saturation voltage

VBE(sat)

Ic=100mA, IB=5mA

0.84

1.0

V

Base-emitter on voltage

VBE(on)

VCE=5V, Ic=2mA

0.58

0.63

0.7

V

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

2.2

3.5

pF

Current gain-Bandwidth Porduct

fT

VCE=5V, Ic=10mA

150

270

MHz

Noise Figure

NF

VCE=5V, Ic=0.2mA

f=1KHz, Rs=2K

Ω

0.9

10

dB

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