13005BA

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-089.a



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

800

V

Collector-Base Voltage

800

V

Emitter Base Voltage

9

V

Collector Current

Continuous

3

A

Peak (1)

8

A

Base Current

Continuous

2

A

Peak (1)

4

A

Emitter Current

Continuous

6

A

Peak (1)

12

A

1

W

Junction Temperature

-65 ~ +150

°С

Storage Temperature Range

-65 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

150

°С/W

Junction to Case

112

°С/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

(Note 1)

Collector-Emitter Sustaining Voltage

800

V

Collector Cutoff Current

1

mA

5

Emitter Cutoff Current

1

mA

ON CHARACTERISTICS

(Note 1)

DC Current Gain

15

50

10

60

8

40

Collector-Emitter Saturation Voltage

0.5

V

0.6

V

1

V

1

V

Base-Emitter Saturation Voltage

1.2

V

1.6

V

1.5

V

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

4

MHz

Output Capacitance

65

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

0.025

0.1

μs

Rise Time

0.3

0.7

μs

Storage Time

1.7

4

μs

Fall Time

0.4

0.9

μs

Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%