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MJE13005L-K-C-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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MJE13005L-K-C-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 9 page ![]() MJE13005-K NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 9 www.unisonic.com.tw QW-R203-045.C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO(SUS) 400 V Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Base Voltage VCBO 700 V Emitter Base Voltage VEBO 9 V Collector Current Continuous IC 4 A Peak (1) ICM 8 A Base Current Continuous IB 2 A Peak (1) IBM 4 A Emitter Current Continuous IE 6 A Peak (1) IEM 12 A Power Dissipation at TA=25°С TO-220 PD 75 W TO-251/TO-252 50 Derate above 25°С TO-220 600 mW/°С TO-251/TO-252 400 Operating and Storage Junction Temperature TJ , TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient Junction to Case TO-220 θJA 62.5 °С/W TO-251/TO-252 110 TO-220 θJC 1.67 °С/W TO-251/TO-252 2.5 |
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