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UD4606ZG-S08-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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UD4606ZG-S08-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UD4606Z Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-763.a DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4606Z is a dual enhancement mode Power MOSFET using UTC perfect trench technology to provide customers with advanced RDS(ON) and low gate charge. This device has ESD protection function. These complementary MOSFETs can be used to form a level shifted high side switch and for other applications. FEATURES * N-Channel: 30V/6.9A RDS(ON)=22.5mΩ (TYP.) (VGS=10V) RDS(ON)=34.5mΩ ((TYP.) (VGS=4.5V) *P-Channel: -30V/-6A RDS(ON)=28mΩ(TYP.) (VGS=-10V ) RDS(ON)=44mΩ(TYP.) (VGS=-4.5V) * Reliable and rugged * ESD protection SYMBOL (2) G1 (7)(8) D1 S1 (1) S2 (3) (4) G2 (5)(6) D2 N-Channel P-Channel ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Plating Halogen Free 1 2 3 4 5 6 7 8 UD4606ZL-S08-R UD4606ZG-S08-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel |
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