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UH11KG-AL6-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UH11KG-AL6-R
상세설명  DUAL BIAS RESISTOR TRANSISTORS
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UH11KG-AL6-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  UH11KG-AL6-R Datasheet HTML 1Page - Unisonic Technologies UH11KG-AL6-R Datasheet HTML 2Page - Unisonic Technologies UH11KG-AL6-R Datasheet HTML 3Page - Unisonic Technologies  
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UH11K
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-027.A
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Collector Current
IC
100
mA
Power Dissipation
PD
150
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=10µA, IE=0
50
V
Collector-Emitter Breakdown Voltage (Note 1)
BVCEO IC=2.0mA, IB=0
50
V
Collector-Base Cutoff Current
ICBO
VCB=50V, IE=0
100
nA
Collector-Emitter Cutoff Current
ICEO
VCE=50V, IB=0
500
nA
Emitter-Base Cutoff Current
IEBO
VEB=6.0V, IC=0
0.5
mA
ON CHARACTERISTICS
(Note 2)
DC Current Gain
hFE
VCE=10V, IC=5.0mA
35
60
Output Voltage (on)
VOL
VCC=5.0V, VB=2.5V, RL=1.0 kΩ
0.2
V
ON CHARACTERISTICS
(Note 2)
Input Resistor
R1
7.0
10
13
kΩ
Resistor Ratio
R1/R2
0.8
1.0
1.2
kΩ
Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0%
2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0%



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