| 전자부품 데이터시트 검색엔진 |
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UMZ1NG-AL6-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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UMZ1NG-AL6-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UMZ1N Preliminary DUAL TRANSISTOR www.unisonic.com.tw 2 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R215-002,C ABSOLUTE MAXIMUM RATINGS (T A=25°C) PARAMETER SYMBOL LIMITS UNIT TR1 TR2 Collector-Base Voltage VCBO 60 -60 V Collector-Emitter Voltage VCEO 50 -50 V Emitter-Base Voltage VEBO 7 -6 V Collector Current IC 0.15 -0.15 A Collector Power Dissipation Pc 0.15 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT TR1 Collector-Base Breakdown Voltage BVCBO IC=50µA 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 50 V Emitter-Base Breakdown Voltage BVEBO IE=50µA 7 V Collector Cut-Off Current ICBO VCB=60V 0.1 µA Emitter Cut-Off Current IEBO VEB=7V 0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC/IB=50mA/5mA 0.4 V DC Current Transfer Ratio hFE VCE=6V, IC=1mA 120 560 Transition Frequency fT VCE=12V, IE=-2mA, f=100MHz 180 MHz Output Capacitance Cob VCB=12V, IE=0A, f=1MHz 2 3.5 pF TR2 Collector-Base Breakdown Voltage BVCBO IC=-50µA -60 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -50 V Emitter-Base Breakdown Voltage BVEBO IE=-50µA -6 V Collector Cut-Off Current ICBO VCB=-60V -0.1 µA Emitter Cut-Off Current IEBO VEB=-6V -0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC/IB=-50mA/-5mA -0.5 V DC Current Transfer Ratio hFE VCE=-6V, IC=-1mA 120 560 Transition Frequency fT VCE=-12V, IE=2mA, f=100MHz 140 MHz Output Capacitance Cob VCB=-12V,IE=0A, f=1MHz 4.0 5.0 pF |
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