UT9971P

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-764.B



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±25

V

Drain Current

5

A

Pulsed

20

A

2.7

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 3)

45

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

3.0

V

Static Drain-Source On-State Resistance

(Note 2)

50

mΩ

60

mΩ

Forward Transconductance

7

S

DYNAMIC PARAMETERS

Input Capacitance

760

pF

Output Capacitance

188

pF

Reverse Transfer Capacitance

35

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 2)

56

nC

Gate to Source Charge

5.5

nC

Gate to Drain Charge

8.8

nC

Turn-ON Delay Time (Note 2)

40

ns

Rise Time

40

ns

Turn-OFF Delay Time

170

ns

Fall-Time

50

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 2)

1.2

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width ≤ 300µs, Duty cycle ≤ 2%