IRF830 datasheet(5/7 Pages) NELLSEMI

부품명	IRF830

상세설명	N-Channel Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

제조업체	NELLSEMI [Nell Semiconductor Co., Ltd]

홈페이지	http://www.nellsemi.com

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5 / 7 page

SEMICONDUCTOR

Nell High Power Products

RoHS

Fig.12a. Unclamped lnductive test circuit

Rectangular Pulse Duration , t1 (seconds)

Fig.11b. Switching time waveforms

Fig.12b. Unclamped lnductive waveforms

Fig.10 Maximum effective transient thermal impedance,

Junction-to-Case

IRF830 Series

VDS

VGS

90%

10%

td(ON)

td(OFF)

Fig.11a. Switching time test circuit

VDS

VGS

10V

Pulse width ≤ 1µs

Duty Factor ≤ 0.1%

D.U.T.

VDD

0.1

- VDD

D.U.T.

VDS

10V

lAS

0.01Ω

0.1

10 ²

10 ³

10 ⁴

₅

10 ²

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Page 5 of 7

Vary t to obtain required I

Single pulse

(Thermal response)

D = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

Notes:

1. Duty factor, D = t / t

2. Peak T = P

th(j-c)

VDD

Time

lAS

BVDSS

lD(t)

VDS(t)

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