7N20Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-810.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain -Source Voltage

200

V

Gate-Source Voltage

±25

V

Continuous Drain Current

7

A

Pulsed Drain Current (Note 2)

28

A

Single Pulsed Avalanche Energy (Note 3)

130

mJ

Power Dissipation

2.5

W

Operating Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

50

°C/W

Note: When mounted on the minimum pad size recommended (PCB Mount)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

200

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

0.58 0.69

Ω

DYNAMIC PARAMETERS

Input Capacitance

190

250

pF

Output Capacitance

60

75

pF

Reverse Transfer Capacitance

10

13

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1,2)

5.8

7.5

nC

Gate Source Charge

1.4

nC

Gate Drain Charge

2.5

nC

Turn-ON Delay Time

(Note 1,2)

7

25

ns

Turn-ON Rise Time

24

60

ns

Turn-OFF Delay Time

13

35

ns

Turn-OFF Fall-Time

19

50

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

7

A

Maximum Pulsed Drain-Source Diode

Forward Current

28

A

Drain-Source Diode Forward Voltage

1.5

V

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature