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UT90N03L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT90N03L-TN3-R
상세설명  90A, 30V N-CHANNEL(D-S) POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT90N03L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT90N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-847.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
TC=25°C (Note 2, 5)
ID
90
A
TA=25°C (Note 3, 4)
28.8
A
Pulsed
IDM
90
A
Avalanche Current Pulse (L=0.074mH)
IAS
90
A
Single Pulsed Avalanche Energy (L=0.074mH)
EAS
300
mJ
Continuous Source-Drain Diode
Current
TC=25°C (Note 2, 5)
IS
90
A
TA=25°C (Note 3, 4)
3.13
A
Power Dissipation
TC=25°C
(Note 2)
TO-251/TO-252
PD
187
W
TO-263
220
TA=25°C (Note 3, 4)
3.75
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Based on TC=25°C.
3. Surface Mounted on 1"x1" FR4 board.
4. t=10sec.
5. Calculated based on maximum junction temperature. Package limitation current is 90A.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
(Note 1, 2)
t≤10sec
θJA
40
°C/W
Junction to Case
Steady State
TO-251/TO-252
θJC
0.6
°C/W
TO-263
0.5
Notes: 1. Maximum under Steady State conditions is 90°C/W.
2. Surface Mounted on 1" x1" FR4 board.



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