UT7430G-K08-3030-R datasheet(3/7 Pages) UTC

3 / 7 page

UT7430

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-903.b



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TC=25°C

TC=100°C

Pulsed (Note 3)

IDM

Continuous Drain Current (Note 1)

TA=25°C

IDSM

TA=70°C

10.2

Avalanche Current (Note 3)

IAR

Repetitive Avalanche Energy

L=0.1mH (Note 3)

EAR

Power Dissipation (Note 2)

TC=25°C

TC=100°C

Power Dissipation (Note 1)

TA=25°C

PDSM

3.1

TA=70°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 1)

θJA

°C/W

Junction to Case (Note 2)

θJC

4.5

5.4

°C/W

Notes: 1. The value of θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board

design, and the maximum temperature of 150°C may be used if the PCB allows it.

2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is

more useful in setting the upper dissipation limit for cases where additional heat sinking is used.

3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C.

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