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UTT4N10L-AA3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UTT4N10L-AA3-R
상세설명  3.5A, 100V N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT4N10L-AA3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UTT4N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-858.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage TJ≥25°C, TJ≤150°C
VDSS
100
V
Drain-Gate Voltage
TJ≥25°C, TJ≤150°C, RGS=20kΩ
VDGR
100
V
Gate-Source Voltage
VGSS
±16
V
Drain Current
Continuous
TC=100°C, VGS=5V
ID
2.2
A
TC=25°C, VGS=5V
3.5
A
Pulsed
TC=25°C, tp≤10µs
IDM
14
A
Non-Repetitive
Avalanche Current
VGS=5V, VDD≤15V, RGS=50Ω,
Unclamped
IAS
3.5
A
Non-Repetitive
Avalanche Energy
VGS=5V, VDD≤15V, RGS=50Ω,
ID=3.5A, Unclamped, tp=0.2ms
EAR
45
mJ
Power Dissipation
PD
6.9
W
Junction Temperature
TJ
-65~+150
°C
Storage Temperature Range
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
150
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V, TJ=-55°C
89
V
ID=250µA, VGS=0V, TJ=25°C
100 130
V
Gate-Source Leakage Current
Forward
IGSS
VGS=+10V, VDS=0V, TJ=25°C
10
100
nA
Reverse
VGS=-10V, VDS=0V, TJ=25°C
-10 -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA, TJ=25°C
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=5V, ID=1.75A, TJ=25°C
200 250 mΩ
VGS=5V, ID=1.75A, TJ=150°C
575 mΩ
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=5V, VDS=80V, ID=3.5A,
TJ=25°C
6.8
nC
Gate to Source Charge
QGS
1.1
nC
Gate to Drain Charge
QGD
3.6
nC
Turn-ON Delay Time
tD(ON)
VDS=50V, VGS=5V, RL=15Ω,
RG(ext)=6Ω, TJ=25°C
4
ns
Rise Time
tR
10
ns
Turn-OFF Delay Time
tD(OFF)
52
ns
Fall-Time
tF
21
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
IS
TJ=25°C
3.5
A
Maximum Body-Diode Pulsed Current
ISM
TJ=25°C, tp≤10µs
14
A
Drain-Source Diode Forward Voltage
VSD
IS=3.5A, VGS=0V, TJ=25°C
0.87 1.5
V
Body Diode Reverse Recovery Time
tRR
IS=3.5A, VGS=0V, dIS/dt=-100A/µs,
VDS=30V, TJ=25°C
50
ns
Body Diode Reverse Recovery Charge
QRR
100
nC



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