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UTT6NP10G-S08-R 데이터시트(PDF) 6 Page - Unisonic Technologies |
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UTT6NP10G-S08-R 데이터시트(HTML) 6 Page - Unisonic Technologies |
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6 / 7 page ![]() UTT6NP10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 7 www.unisonic.com.tw QW-R502-772.D TYPICAL CHARACTERISTICS N-channel Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS (V) 0.5 0 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 1.5 2 3 2.5 0 50 100 150 200 250 300 0 30 90 120 150 60 0 50 100 150 200 250 300 1 |
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