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UTT20P04L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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UTT20P04L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTT20P04 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID -20 A Pulsed IDM -80 A Avalanche Current IAR -20 A Avalanche Energy Single Pulsed EAS 36 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. TJ=25°C, VDD=-25V, L=0.1mH, RG=25Ω, IAS=-20A. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V -40 V Drain-Source Leakage Current IDSS VDS=-40V 1 μ A Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V 100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=-250µA -1 -3 V Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-20A 42 mΩ VGS=-5V, ID=-8A 55 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1MHz 1190 pF Output Capacitance COSS 185 pF Reverse Transfer Capacitance CRSS 95 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=-10V, VDD=-30V, ID=-20A 17 nC Gate to Source Charge QGS 5.5 nC Gate to Drain Charge QGD 3 nC Turn-ON Delay Time tD(ON) VDD=-30V, ID=-20A RG=25Ω, VGS=-10V 6 ns Rise Time tR 16 ns Turn-OFF Delay Time tD(OFF) 26 ns Fall-Time tF 10 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS -20 A Maximum Body-Diode Pulsed Current ISM -80 A Drain-Source Diode Forward Voltage VSD IS=-20A -1.2 V |
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