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UTT50N06L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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UTT50N06L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 8 page ![]() UTT50N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-704.C ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC = 25°C ID 50 A TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Avalanche Energy Single Pulsed (Note 3) EAS 120 mJ Repetitive (Note 2) EAR 13 mJ Power Dissipation (TC=25°C) TO-220 PD 100 W TO-252 114 Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.1mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220 θJA 62 °C/W TO-252 100 Junction to Case TO-220 θJC 1.24 °C/W TO-252 1.1 |
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