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UZ0103XG-AA3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UZ0103XG-AA3-R
상세설명  1A TRIACS
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UZ0103XG-AA3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UZ0103
Preliminary
TRIACS
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-037.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
UZ0103M
VDRM
600
V
UZ0103N
800
V
Repetitive Peak Reverse Voltage
UZ0103M
VRRM
600
V
UZ0103N
800
V
RMS On-State Current (full sine wave)
TL=50°C
IT(RMS)
1
A
Non Repetitive Surge Peak On-State
Current (full cycle, TJ initial=25°C)
F=50Hz, t=20ms
ITSM
8
A
F=60Hz, t=16.7ms
8.5
A
I
2t Value for Fusing
tp=10ms
I
2t
0.35
A
2s
Critical Rate of Rise of On-State Current:
IG=2*IGT, tr≤100ns
F=120Hz, TJ=125°C
dI/dt
20
A/µs
Peak Gate Current
tp=20µs, TJ=125°C
IGM
1
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-92
θJA
150
°C/W
SOT-223
60
°C/W
Junction to Case
TO-92
θJC
60
°C/W
SOT-223
25
°C/W
Note: S=Copper surface under tab.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
QUADRANT
MIN
TYP MAX UNIT
Repetitive Peak Off-State or
Reverse Current
IDRM, IRRM
VDRM=VRRM
TJ=25°C
5
µA
TJ=125°C
0.5
mA
Gate Trigger Current (Note 1)
IGT
VD=12V, RL=30Ω
I-II-III
3
mA
IV
5
mA
Gate Trigger Voltage
VGT
ALL
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
TJ=125°C
ALL
0.2
V
Holding Current (Note 2)
IH
IT=50mA
7
mA
Latching Current
IL
IG=1.2IGT
I-III-IV
7
mA
II
15
mA
Rise of Off-State Voltage (Note 2)
dVD/dt
VD=67%VDRM, Gate Open, TJ=110°C
10
V/µs
Rise of Off-State Voltage at
Commutation (Note 2)
(dVCOM/dt)c (dI/dt)c=0.44A/ms, TJ=110°C
0.5
V/µs
On-State Voltage (Note 2)
VTM
ITM=1.4 A, tp=380µs, TJ=25°C
1.56
V
Dynamic Resistance (Note 2)
RD
Dynamic resistance, TJ=125°C
400
mΩ
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.



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