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LDA110

Rev. 3

Absolute Maximum Ratings are stress ratings. Functional

operation of the device at these or any other conditions

beyond those indicated in the operational sections of this

data sheet is not implied. Exposure of the device to the

absolute maximum ratings for an extended period may

degrade the device and effect its reliability.

2

Electrical Characteristics

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

Output Characteristics @ 25°C

Phototransistor Blocking Voltage

I

BV

CEO

20

50

-

V

Phototransistor Output Current

V

I

CEO

-

50

500

nA

Saturation Voltage

I

V

SAT

--

-

V

I

-

0.5

0.5

V

Current Transfer Ratio

I

CTR

300

1000

-

%

Output Capacitance

50V, f=1 MHz

C

OUT

-3

-

pF

Capacitance

Input to Output

-

-

-

-

-

-pF

Input Characteristics @ 25°C

Input Control Current

I

I

F

2

1

100

mA

Input Voltage Drop

I

V

F

0.9

1.2

1.4

V

Input Reverse Voltage

-

V

R

--

5

V

(LDA101, LDA111)

Input Reverse Current

V

I

R

--

10

nA

(LDA101, LDA111)

Common Characteristics @ 25°C

Input to Output Isolation

-

V

I/O

3750

-

-

V

RMS

Parameter

Min

Typ

Max Units

Input Power Dissipation

-

-

mW

Input Control Current

-

-

100

mA

Peak (10ms)

-

-

1

A

Reverse Input Voltage

-

-

5

V

Phototransistor

-

-

mW

Power Dissipation

Total Package Dissipation

-

-

mW

Isolation Voltage

Input to Output

3750

-

-

V

RMS

Operational Temperature

-40

-

+85

Storage Temperature

-40

-

+125

Soldering Temperature

DIP Package

-

-

+260

Surface Mount Package

-

-

+220

(10 Seconds Max.)