CYStech Electronics Corp.

Spec. No. : 794N3

Issued Date : 2011.03.14

Revised Date : 2013.09.09

Page No. : 2/ 9

MTP3LP01S3

CYStek Product Specification

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±10

V

Continuous Drain Current

-230

mA

-920

mA

200

mW

Thermal Resistance, Junction-to-Ambient

625

°C/W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Pulse width≤ 10μs, duty cycle≤1%.

2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

-30

-

-

V

-0.6

0.9

-1.1

V

100

210

-

mS

-

-

±

1

μA

-

-

-1

-

-

-10

μA

-

3

5

-

4.6

8

-

10.9

18

Ω

Dynamic

Ciss

-

35.7

-

Coss

-

11.9

-

Crss

-

3.7

-

pF

-

26.4

-

-

12.8

-

-

31.5

-

-

46.4

-

ns

*Qg

-

0.78

-

*Qgs

-

0.1

-

*Qgd

-

0.1

-

nC

Source-Drain Diode

-

-

-230

-

-

-920

mA

-

0.83

-1.2

V

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%