CYStech Electronics Corp.

Spec. No. : 794Y3

Issued Date : 2011.12.22

Revised Date :

Page No. : 1/ 8

MTP3LP01Y3

CYStek Product Specification

30V P-CHANNEL Enhancement Mode MOSFET

-30V

MTP3LP01Y3

-230mA

Features

• Ultra high speed switching.

• Low gate charge.

• 2.5V drive.

• Pb-free package lead plating and halogen-free package.

Equivalent Circuit

Outline

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±10

V

Continuous Drain Current

-230

mA

-920

mA

150

mW

Thermal Resistance, Junction-to-Ambient

833

°C/W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Pulse width≤ 10μs, duty cycle≤1%.

2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.

MTP3LP01Y3

SOT-723

3Ω@-4V

4.6Ω@-2.5V

10.9Ω@-1.5V

D

G：Gate

S：Source

D：Drain

S

G