| 전자부품 데이터시트 검색엔진 |
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SRV05-4L-AG6-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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SRV05-4L-AG6-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() SRV05-4 Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R601-076.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT ESD Voltage (HBM Contact) VESD >8 kV Peak Pulse Power (8/20μs Waveform) PPP 350 W Peak Pulse Current (8/20μs Waveform) IPPM 12 A Storage Temperature TSTG -55~+150 °C Operating Junction Temperature TJ -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Reverse Stand-Off Voltage VWRM 5 V Reverse Breakdown Voltage VBR IBR=1mA, PIN 5 to 2 6 V Reverse Leakage Current IR VR=5V, PIN 5 to 2 1.2 5 μA Clamping Voltage (8/20μs) VC IPP=1A, ANY I/O pin to pin 2 12 V IPP=5A, ANY I/O pin to pin 2 17 V Off State Junction Capacitance CJ 0Vdc, f=1.0MHZ, between I/O lines and GND 1.1 1.2 pF 0Vdc, f=1.0MHZ, between I/O lines 0.55 0.60 pF |
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