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UPRTR5V0U4DL-AG6-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UPRTR5V0U4DL-AG6-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() UPRTR5V0U4D DIODE UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R601-077.B ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Input Voltage VIN 0~5.5 V ESD Voltage (HBM Contact) IEC 61000-4-2 level 4 Contact Discharge (Note 2, 3) VESD 8 kV MIL-STD-883 Human Body Model 8 kV Ambient Temperature TA -55~+150 °C Junction Temperature TJ 150 °C Storage Temperature TSTG -65~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device stressed with ten non-repetitive ESD pulses. 3. Measured from pin 1, 3, 4 or 6 to pin 2 or 5. ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input/Output to Ground Capacitance C(I/O-GND) V(I/O-GND)=0V, VCC=3.0V, f=1MHz (Note 1) 1.0 pF Reverse Leakage Current ILR VR=3.0V (Note 1) 100 nA Breakdown Voltage VBR II=1mA 6 9 V Supply Pin to Ground Capacitance CSUP V(I/O-GND)=0V, VCC=3.0V, f=1MHz (Note 2) 40 pF Forward Voltage VF 0.7 V Notes: 1. Measured from pins 1, 3, 4 and 6 to pin 2. 2. Measured from pin 5 to pin 2. |
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