BU941ZP3 datasheet(2/5 Pages) CYSTEKEC

2 / 5 page

CYStech Electronics Corp.

Spec. No. : C660P3

Issued Date : 2008.07.22

Revised Date :2011.01.04

Page No. : 2/5

BU941ZP3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

350

Collector-Emitter Voltage

VCEO

350

Emitter-Base Voltage

VEBO

IC(DC)

Collector Current

IC(Pulse)

IB(DC)

Base Current

IB(Pulse)

Power Dissipation

Pd(TC=25℃)

155

Thermal Resistance, Junction to Case

RθJC

0.97

°C/W

Junction Temperature

175

°C

Storage Temperature

Tstg

-65~+175

°C

Note : *1. Single Pulse tp<5ms

Characteristics (Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

350

IC=1mA, IE=0

BVCEO

350

IC=100mA, IB=0

ICEO

100

μA

VCE=300V, IE=0

ICBO

100

μA

VCB=300V, IE=0

IEBO

VEB=5V, IC=0

*VCE(sat) 1

1.8

IC=8A, IB=100mA

*VCE(sat) 2

1.8

IC=10A, IB=250mA

*VCE(sat) 3

IC=12A, IB=300mA

*VBE(sat) 1

2.2

IC=8A, IB=100mA

*VBE(sat) 2

2.5

IC=10A, IB=250mA

*VBE(sat) 3

2.7

IC=12A, IB=300mA

*VFEC

2.5

IC=10A

*hFE 1

300

VCE=10V, IC=5A

*hFE 2

100

VCE=10V, IC=8A

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

Ordering Information

Device

Package

Shipping

Marking

BU941ZP3

TO-247

(Pb-free lead plating package)

30 pcs / tube, 10 tubes/ box ,

10 boxes/carton

BU941Z

BU941ZP3 데이터시트(PDF) 2 Page - Cystech Electonics Corp.

BU941ZP3 데이터시트(HTML) 2 Page - Cystech Electonics Corp.

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL