2SC2149 datasheet(5/8 Pages) NEC

5 / 8 page

2SC2148, 2SC2149

2SC2149

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

3.0

Collector Current

Total Power Dissipation

PT(TA = 25 °C)

290

Total Power Dissipation

PT(Tc = 140 °C)

500

Junction Temperature

200

°C

Storage Temperature

Tstg

−65 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

0.1

µAVCB = 15 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

µAVEB = 2.0 V, IC = 0

DC Current Gain

hFE

200

VCE = 10 V, IC = 20 mA

Gain Bandwidth Product

5.0

GHz

VCE = 10 V, IC = 20 mA

Output Capacitance *

Cob

0.6

VCB = 10 V, IE = 0, f = 1.0 MHz

12.7

f = 1.0 GHz

Insertion Gain

S21e2

5.0

6.7

VCE = 10 V, IC = 20 mA

f = 2.0 GHz

1.7

f = 1.0 GHz

Noise Figure

2.6

4.0

VCE = 10 V, IC = 5.0 mA

f = 2.0 GHz

f = 1.0 GHz

Maximum Available Gain

MAG

VCE = 10 V, IC = 20 mA

f = 2.0 GHz

* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.

TYPICAL CHARACTERISTICS (TA = 25

°C)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

200

100

0.5

50 70

−Collector Current−mA

VCE = 10 V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

0.5

0.6

0.7

0.8

0.9

VBE

−Base to Emitter Voltage−V

VCE = 10 V

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