DS56

4 of 6

102299

ABSOLUTE MAXIMUM RATINGS*

(GND-0.3V) to +7.0V

Input Current at any pin

5.0 mA

Package Input Current

20 mA

Operating Temperature

-40°C to +125°C

Storage Temperature

-55°C to 150°C

ESD Susceptibility (Human Body Model)

1kV

Soldering Temperature (Note 2)

215°C for 60 seconds (Vapor Phase)

220°C for 15 seconds (IR)

*

This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods of time may affect reliability.

The Dallas Semiconductor DS56 is built to the highest quality standards and manufactured for long-term

reliability. All Dallas Semiconductor devices are made using the same quality materials and

manufacturing methods. However, the DS56 is not exposed to environmental stresses, such as burn-in,

that some industrial applications require. For specific reliability information on this product, please

contact the factory in Dallas at (972) 371-4448.

RECOMMENDED DC OPERATING CONDITIONS:

(-40°C to +125°C; 2.7V

≤V

DD

≤5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

Supply Voltage

2.7

5.5

V

1

DC ELECTRICAL CHARACTERISTICS:

Power Supply (Note 3)

(-40°C to +125°C; 2.7V

≤V

DD

≤5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

Supply Current

225

µA

DC ELECTRICAL CHARACTERISTICS:

Temperature Sensor (Note 3)

(-40°C to +125°C; 2.7V

≤V

DD

≤5.5V)

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNITS

NOTES

-40°C

≤T

A

≤125°C

±3

Trip Point

Accuracy

0°C

≤T

A

≤85°C

±2

°C

4

-40°C

≤T

A

≤125°C

±3

0°C

≤T

A

≤85°C

±2

°C

5

T=0°C

395

mV

Sensor Gain

? V/? T

6.25

mV/°C

Trip Point

Hysteresis

3.0

5.0

7.0

°C

2.7V

≤V

DD

≤3.3V

±2.3

mV

Power Supply

Regulation

3.0V

≤V

DD

≤5.5V

±0.3

mV/V

Impedance

1500

Ω