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DS80C320 데이터시트(PDF) 29 Page - Dallas Semiconductor |
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DS80C320 데이터시트(HTML) 29 Page - Dallas Semiconductor |
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29 / 42 page ![]() DS80C320/DS80C323 29 of 42 DS80C323 AC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL 18 MHz MIN 18 MHz MAX VARIABLE CLOCK MIN VARIABLE CLOCK MAX UNITS Oscillator Frequency (Ext. Osc.) (Ext. Crystal) 1/tCLCL 0 1 18 18 0 1 18 18 MHz ALE Pulse Width tLHLL 73 1.5tCLCL-10 ns Port 0 Address Valid to ALE Low tAVLL 16 0.5tCLCL-11 ns Address Hold After ALE Low tLLAX1 8 note 5 0.25tCLCL-5 note 5 ns Address Hold After ALE Low for MOVX WR tLLAX2 20 0.5tCLCL-7 ns ALE Low to Valid Instruction In tLLIV 112 2.5tCLCL-27 ns ALE Low to PSEN Low tLLPL 6 0.25tCLCL-7 ns PSEN Pulse Width tPLPH 118 2.25tCLCL-7 ns PSEN Low to Valid Instruction In tPLIV 104 2.25tCLCL-21 ns Input Instruction Hold After PSEN tPXIX 0 0 ns Input Instruction Float After PSEN tPXIZ 51 tCLCL-5 ns Port 0 Address to Valid Instruction In tAVIV1 140 3tCLCL-27 ns Port 2 Address to Valid Instruction In tAVIV2 162 3.5tCLCL-33 ns PSEN Low to Address Float tPLAZ note 5 note 5 ns NOTES FOR DS80C323 AC ELECTRICAL CHARACTERISTICS: All parameters apply to both commercial and industrial temperature range operation unless otherwise noted. AC timing characteristics valid for oscillator frequency > 16 MHz. 1. All signals rated over operating temperature at 18 MHz. 2. All signals characterized with load capacitance of 80 pF except Port 0, ALE, PSEN , RD and WR at 100 pF. Note that loading should be approximately equal for valid timing. 3. Interfacing to memory devices with float times (turn off times) over 35 ns may cause contention. This will not damage the parts, but will cause an increase in operating current. 4. Specifications assume a 50% duty cycle for the oscillator. Port 2 timing will change with the duty cycle variations. 5. Address is held in a weak latch until over-driven by external memory. |
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