IRFS4310ZPBF datasheet(2/11 Pages) IRF

2 / 11 page

IRFB/S/SL4310ZPbF

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.28mH

RG = 25, IAS = 58A, VGS =10V. Part not recommended for use

above the Eas value and test conditions.

ISD  75A, di/dt  600A/μs, VDD V(BR)DSS, TJ  175°C.

Pulse width  400μs; duty cycle  2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

R is measured at TJ approximately 90°C

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

0.11

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

4.8

6.0



VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

0.7

–––



Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

150

–––

Total Gate Charge

–––

120

170

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

6860

–––

Coss

Output Capacitance

–––

490

–––

Crss

Reverse Transfer Capacitance

–––

220

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) –––

570

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)h –––

920

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

––– 127c

(Body Diode)

ISM

Pulsed Source Current

–––

560

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 85V,

–––

TJ = 125°C

IF = 75A

Qrr

Reverse Recovery Charge

–––

nC TJ = 25°C

di/dt = 100A/μs

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

2.5

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ID = 75A

RG = 2.7

VGS = 10V

VDD = 65V

ID = 75A, VDS =0V, VGS = 10V

TJ = 25°C, IS = 75A, VGS = 0V

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mA

VGS = 10V, ID = 75A

VDS = VGS, ID = 150μA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS =50V

Conditions

VGS = 10V

VGS = 0V

VDS = 50V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 0V to 80V

i, See Fig. 11

VGS = 0V, VDS = 0V to 80V

Conditions

VDS = 50V, ID = 75A

ID = 75A

VGS = 20V

VGS = -20V

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