CYStech Electronics Corp.

Spec. No. : C464FP

Issued Date : 2009.08.14

Revised Date : 2013.12.10

Page No. : 2/4

MBR20150FP

CYStek Product Specification

Maximum Ratings and Electrical Characteristics (Per Diode Leg)

(

Rating at 25

°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,

resistive or inductive load. For capacitive load, derate current by 20%.)

Parameter

Symbol

Min.

Typ.

Max.

Units

Maximum Recurrent peak reverse voltage

150

V

Maximum RMS voltage

100

V

Maximum DC blocking voltage

150

V

0.85

0.68

0.72

0.95

Maximum instantaneous

forward voltage at

(Note 1)

0.85

V

Per Diode

10

Maximum Average forward

Per Device

20

A

Non-repetitive peak forward surge current @

8.3ms single half sine wave superimposed on

rated load (JEDEC method)

150

A

3

A

5

μA

Maximum instantaneous

reverse current at

5

mA

dV/dt

10,000

V/μs

Typical junction capacitance @ f=1MHz and applied

5V reverse voltage

168

pF

8000

V

Storage temperature range

-65

+175

℃

Operating junction temperature range

-65

+175

℃

Notes : 1. 2.0μs pulse width, f=1.0kHz

2. Human body model, 1.5kΩ in series with 100pF

Thermal Data

Parameter

Symbol

Value

Unit

Maximum Thermal Resistance, Junction-to-case

3.5

°C/W

Lead Temperature for Soldering Purposes : 1/8” from Case for 5seconds

260

°C

Ordering Information

Device

Package

Shipping

Marking

MBR20150FP

TO-220FP

(Pb-free)

50 pcs / Tube, 40 Tubes/Box

20150