| 전자부품 데이터시트 검색엔진 |
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ES1010SI 데이터시트(PDF) 6 Page - Altera Corporation |
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ES1010SI 데이터시트(HTML) 6 Page - Altera Corporation |
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6 / 11 page ![]() Page 6 ES1010SI 12V Hot-Swap Power Distribution Controllers March 2014 Altera Corporation During the soft-start and the time-out delay duration with the IC in its current limit mode, the VGS of the external N-Channel MOSFET is reduced driving the MOSFET switch into a (linear region) high rDS(ON) state. Strike a balance between the CR limit and the timing requirements to avoid periods when the external N-Channel MOSFETs may be damaged or destroyed due to excessive internal power dissipation. Refer to the MOSFET SOA information in the manufacturer’s data sheet. When driving particularly large capacitive loads a longer soft-start time to prevent current regulation upon charging and a short CR time may offer the best application solution relative to reliability and FET MTF. Physical layout of RSENSE resistor is critical to avoid the possibility of false overcurrent occurrences. Ideally, trace routing between the RSENSE resistors and the IC is as direct and as short as possible with zero current in the sense lines (see Figure 1). . CORRECT TO ISEN+ AND CURRENT SENSE RESISTOR INCORRECT FIGURE 1. SENSE RESISTOR PCB LAYOUT RISET 09617 March 14, 2014 Rev A |
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